Epi Wafer 外延晶圆

Our epitaxial silicon wafers are engineered to meet the stringent requirements of advanced semiconductor applications. Grown on high-purity, low-defect monocrystalline substrates, our epi wafers offer excellent surface quality, precise doping control, and superior uniformity across the wafer.

We provide a full range of N-type and P-type epi wafers with customizable thickness, resistivity, and doping profiles, making them ideal for power devices, CMOS logic, image sensors, analog ICs, and RF components. High-voltage and low-leakage requirements can be supported through optimized epi layer design.

Key specifications:

 ●  Substrate Diameter: 4" to 8"

 ●  Epi Layer Thickness: 0.5 to 100 μm

 ●  Doping Type: N ( Phosphorus ) / P ( Boron )

 ●  Resistivity: 0.001 to >1000 Ω·cm

 ●  Surface Orientation: <100>, <111>

Our production process ensures low defect density, excellent interface quality, and tight tolerance on layer parameters, supporting both standard and high-voltage device fabrication.